Propagation of threading dislocations in heteroepitaxial diamond films with (111) orientation and their role in the formation of intrinsic stress

Gallheber, B.-C.; Fischer, M.; Klein, O.; Schreck, M.

doi:10.1063/1.4985174

Journal Article

IMPULSE-2018-00130

Propagation of threading dislocations in heteroepitaxial diamond films with (111) orientation and their role in the formation of intrinsic stress

Gallheber, B.-C. ; Klein, O. ; Fischer, M. ; Schreck, M.

2017
American Inst. of Physics Melville, NY

Journal of applied physics 121(22), 225301 - (2017) [10.1063/1.4985174]

Please use a persistent id in citations: doi:10.1063/1.4985174

Abstract: In the present study, systematic correlations were revealed between the propagation directionof threading dislocations, the off-axis growth conditions, and the stress state of heteroepitaxialdiamond on Ir/YSZ/Si(111). Measurements of the strain tensor e$by X-ray diffraction and the subsequentcalculation of the tensor of intrinsic stress r$showed stress-free samples as well as symmetricbiaxial stress states for on-axis samples. Transmission electron microscopy (TEM) lamellaswere prepared for plan-view studies along the [111] direction and for cross-section investigationsalong the [112] and [110] zone axes. For samples grown on-axis with parameters which avoid theformation of intrinsic stress, the majority of dislocations have line vectors clearly aligned along[111]. A sudden change to conditions that promote stress formation is correlated with an abruptbending of the dislocations away from [111]. This behaviour is in nice agreement with the predictionsof a model that attributes formation of intrinsic stress to an effective climb of dislocations.Further growth experiments under off-axis conditions revealed the generation of stress states withpronounced in-plane anisotropy of several Gigapascal. Their formation is attributed to the combinedaction of two basic processes, i.e., the step flow driven dislocation tilting and the temperaturedependent effective climb of dislocations. Again, our interpretation is supported by the dislocationpropagation derived from TEM observations.

Keyword(s): Others (1st) ; Crystallography (2nd)

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