| Hauptseite > Institutssammlungen > TOFTOF > Nickel self-diffusion in silicon-rich Si–Ni melts |
| Journal Article |
; ; ;
2008-00-
American Institute of Physics
Melville, NY
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Please use a persistent id in citations: doi:10.1063/1.2947592
Abstract: The nickelself-diffusion coefficient in Si–Ni melts was measured for compositions up to 20at.%Ni in a temperature range from 270K below to 200K above the liquidustemperature by using quasielastic neutron scattering in combination with electromagnetic levitation. Niself-diffusion coefficients are in the order of 10−8m2/s, fairly independent of the Ni concentration. Diffusion coefficients calculated from viscosity data of pure liquidsilicon via the Stokes–Einstein relation compare well with the Niself-diffusion obtained here, indicating a strong correlation between the mobility of the silicon and nickel atoms.
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