Journal Article

IMPULSE-2026-00027

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Active positron manipulation in semiconductors

Guatieri, F.MLZ*

2025
IOP Publ. Bristol

Please use a persistent id in citations: doi:10.1088/1742-6596/3149/1/012032

Abstract: Positrons implanted into semiconductors can, after their thermalization, diffuse for several hundred nanometers and drift for up to a few micrometers. This behavior has been exploited technologically to produce sensitive probes of negatively charged defects, and is key to allow for the production of efficient (re)moderators and nanostructured positron-to-positronium converters. I have recently investigated numerically the technological possibilities offered by actively manipulating positrons inside of semiconductor bulks wherein bespoke integrated electronics have been printed and proposed a possible design for an actively controlled positron remoderator. This proceeding I will share some additional simulations of the expected behavior of these devices in the few hundreds of picoseconds following a change in their polarization status.

Keyword(s): Instrument and Method Development (1st) ; Instrument and Method Development (2nd)

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Contributing Institute(s):

1. NEPOMUC (NEPOMUC)

Experiment(s):

1. No specific instrument

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Database coverage:
; Nationallizenz ; SCOPUS

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