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| Home > Publications database > Dendritic Copper Current Collectors as a Capacity Boosting Material for Polymer-Templated Si/Ge/C Anodes in Li-Ion Batteries |
| Home > Publications database > Dendritic Copper Current Collectors as a Capacity Boosting Material for Polymer-Templated Si/Ge/C Anodes in Li-Ion Batteries |
| Journal Article | IMPULSE-2024-00013 |
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2024
Soc.
Washington, DC
Please use a persistent id in citations: doi:10.1021/acsami.3c15735
Abstract: Dendritic copper offers a highly effective method for synthesizing porous copperanodes due to its intricate branching structure. This morphology results in an elevated surfacearea-to-volume ratio, facilitating shortened electron pathways during aqueous and electrolytepermeation. Here, we demonstrate a procedure for a time- and cost-efficient synthesis routineof fern-like copper microstructures as a host for polymer-templated Si/Ge/C thin films.Dissolvable Zintl clusters and sol−gel chemistry are used to synthesize nanoporous coating asthe anode. Cyclic voltammetry (CV) with KOH as the electrolyte is used to estimate thesurface area increase in the dendritic copper current collectors (CCs). Half cells are assembledand tested with battery-related techniques such as CV, galvanostatic cycling, andelectrochemical impedance spectroscopy, showing a capacity increase in the dendritic coppercells. Energy-dispersive X-ray spectroscopy is used to estimate the removal of K in the bulk afteroxidizing the Zintl phase K12Si8Ge9 in the polymer/precursor blend with SiCl4. Furthermore,scanning electron microscopy images are provided to depict the thin films after synthesis andtrack the degradation of the half cells after cycling, revealing that the morphological degradation through alloying/dealloying isreduced for the dendritic Cu CC anodes as compared with the bare reference. Finally, we highlight this time- and cost-efficientroutine for synthesizing this capacity-boosting material for low-mobility and high-capacity anode coatings.
Keyword(s): Energy (1st) ; Materials Science (2nd)
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