Journal Article

IMPULSE-2017-00219

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Instrumental determination of phosphorus in silicon for photovoltaics by β spectroscopy: a new approach

Karches, B. (Corresponding author) ; Welter, K. ; Stieghorst, C.MLZ* ; Wiehl, N. ; Reich, T. ; Riepe, S. ; Krenckel, P. ; Gerstenberg, H.MLZ* ; Plonka, C.

2017
Springer Science + Business Media B.V Dordrecht [u.a.]

Please use a persistent id in citations: doi:10.1007/s10967-016-5051-7

Abstract: In this study, we report on the investigation of a beta-gamma-anticoincidence set up for the determination of phosphorus in silicon for photovoltaics by Instrumental Neutron Activation Analysis. For the suppression of disturbing beta/gamma radiation emitted by impurities, a plastic scintillator for beta-detection is surrounded by a well type NaI(Tl) gamma-detector. A suppression of 40 % for the impurities Co-60 and Sb-124 could be achieved. The limit of detection was determined to be less than 0.1 ppm. In order to correct different beta absorption, dedicated Geant4 simulations were used. With first quantitative measurements the phosphorus concentration in silicon could be determined.

Keyword(s): Engineering, Industrial Materials and Processing (1st) ; Chemistry (2nd)

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Contributing Institute(s):

1. PGAA
2. IRRAD

Experiment(s):

1. Instrumental Neutron Activation Analysis

Appears in the scientific report 2017

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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