Journal Article

IMPULSE-2017-00207

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Determination of impuritiy distributions in ingots of solar grade silicon by neutron activation analysis

Karches, B. ; Schoen, J. ; Gerstenberg, H.MLZ* ; Hampel, G. ; Krenckel, P. ; Plonka, C. ; Ponsard, B. ; Riepe, S. ; Stieghorst, C.MLZ* ; Wiehl, N.

2017
De Gruyter Berlin

Please use a persistent id in citations: doi:10.1515/ract-2016-2687

Abstract: In a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get real bulk concentrations.

Keyword(s): Chemical Reactions and Advanced Materials (1st) ; Industrial Application (2nd) ; Chemistry (2nd)

Note: eISSN 2193-3405, ISSN 0033-8230

---

Contributing Institute(s):

1. MLZ (MLZ)

Experiment(s):

1. Instrumental Neutron Activation Analysis

Appears in the scientific report 2017

---

Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

---